Selection and technical parameters of rapid annealing furnace

The models that can be used for reference in the selection of fast annealing furnace are: fast sintering furnace, RTP annealing furnace, fast temperature rise and fall furnace, fast furnace, RTP fast annealing furnace, imported fast annealing furnace, adopting high-power infrared radiation mode, cooperating with gold plating reflector in the cavity,

The models that can be used for reference in the selection of fast annealing furnace are: fast sintering furnace, RTP annealing furnace, fast temperature rise and fall furnace, fast furnace, RTP fast annealing furnace, imported fast annealing furnace, adopting high-power infrared radiation mode, cooperating with gold-plated reflection layer in the cavity, so that the single silicon chip can be heated rapidly. When cooling, the infrared light tube stops working, and the large flow of compressed air (or cooling nitrogen) quickly takes away the heat in the cavity, so as to realize rapid cooling.

Main technical parameters of rapid annealing furnace (the following parameters can be adjusted according to the demand)

1、 Form: desktop, single chip

2. Wafer size: 156 * 156 square wafer, 2-8 inch wafer

4. Rated working temperature: 1000 ℃

5. Single point temperature stability and repeatability: & plusmn; 0.5 ℃

6. Temperature uniformity: & plusmn; 1 ℃ (above 900 ℃)

7. Heating rate: 0 - 100 ℃ / s adjustable

8. Cooling rate: 0 - 100 ℃ / s adjustable

9. Constant temperature time: 0 - 600 s

10. Heating power: 18 infrared tubes (1.5KW each), total power 27kw

11. Aluminum alloy furnace: aluminum alloy water-cooled gold-plated furnace, good thermal conductivity, effectively improve the cooling rate

12. Quartz furnace: detachable structure. When the temperature rise rate decreases due to smoke pollution in the furnace, the quartz furnace can be removed and cleaned.