Furnace For Poly-Si Epitaxy in SiH4 Decomposing Method
Furnace For Poly-Si Epitaxy in SiH4 Decomposing Method
Description :
SiH4 decompose method means using high purity SiH4 to produce stick-shape poly-Si in heat decompose furnace.
Components: Gas sources, reaction room, vacuum system, exhaust gas system and security system.
Gas sources supply the raw materials for poly-Si epitaxy, and clean the reaction room and gas pipes.
Application :
Furnace for poly-Si epitaxy in SiH4 decomposing method mainly used in electron level poly-Si epitaxy. It can produce high purity electron level poly-Si production through SiH4 decompose method.
Parameter:
12 couples heat-up sticks
Output: 800kg <80 hours
Purity: 9-12N
Transform rate: 88%
Power cost: 50 kilowatt-hours per kilogram
